Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/123
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTongay, Sefaattin-
dc.contributor.authorNarang, Deepa S-
dc.contributor.authorKang, Jun-
dc.contributor.authorFan, Wen-
dc.contributor.authorKo, Changhyun-
dc.date.accessioned2022-04-20T03:42:24Z-
dc.date.available2022-04-20T03:42:24Z-
dc.date.issued2014-01-
dc.identifier.urihttp://192.168.20.106:8080/xmlui/handle/123456789/123-
dc.description.abstractMonolayer Mo1 xWxSe2 (x¼0, 0.14, 0.75, and 1) alloys were experimentally realized from synthesized crystals. Mo1 xWxSe2 monolayers are direct bandgap semiconductors displaying high luminescence and are stable in ambient. The bandgap values can be tuned by varying the W composition. Interestingly, the bandgap values do not scale linearly with composition. Such non-linearity is attributed to localization of conduction band minimum states around Mo d orbitals, whereas the valence band maximum states are uniformly distributed among W and Mo d orbitals. Results introduce monolayer Mo1 xWxSe2 alloys with different gap values, and open a venue for broadening the materials library and applications of two-dimensional semiconductors.en_US
dc.publisherApplied Physics Letters, Vol.104, No. 1, Page 012101 1-4en_US
dc.subjectMonolayer Mo1 xWxSe2en_US
dc.subjectSemiconductorsen_US
dc.titleTwo-Dimensional Semiconductor Alloys: Monolayer Mo12xWxSe2en_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

Files in This Item:
File Description SizeFormat 
Two-dimensional semiconductor alloys.pdf
  Restricted Access
1.61 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.