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Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/14977
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dc.contributor.authorGuchhait, Suman-
dc.contributor.authorAhmad, Aquil-
dc.contributor.authorAireddy, H-
dc.contributor.authorDas, Amal Kumar-
dc.date.accessioned2024-03-30T10:11:01Z-
dc.date.available2024-03-30T10:11:01Z-
dc.date.issued2019-
dc.identifier.citationVol. 2142en_US
dc.identifier.issn0094-243X-
dc.identifier.urihttps://dx.doi.org/10.1063/1.5122438-
dc.identifier.urihttp://gnanaganga.inflibnet.ac.in:8080/jspui/handle/123456789/14977-
dc.description.abstractPolycrystalline ZnO thin film has been deposited on Si cantilever beam substrate by pulsed laser deposition (PLD) technique. The high-resolution x-ray diffraction (HR-XRD) analysis suggests the formation of wurtzite structure along c-axis. The atomic force microscopy (AFM) measurement reveals the growth of a good crystalline film. We have studied the converse piezoelectric-effect of the as-deposited film from +3V to -3V dc voltage. The curve shows a butterfly type loop, which is in good agreement with available literatures. © 2019 American Institute of Physics Inc.. All rights reserved.en_US
dc.language.isoenen_US
dc.publisherAIP Conference Proceedingsen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.subjectPiezoelectricityen_US
dc.subjectCantileveren_US
dc.subjectElectric Poweren_US
dc.subjectCrystal Structureen_US
dc.subjectPulsed Laser Depositionen_US
dc.subjectAtomic Force Microscopyen_US
dc.subjectPolycrystalline Materialen_US
dc.subjectThin Filmsen_US
dc.subjectHigh Resolution X-Ray Diffractionen_US
dc.subjectPublic Policy and Governanceen_US
dc.titleThe Study of Converse Piezoelectric-Effect of Zno Thin Filmen_US
dc.typeArticleen_US
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