Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/15063
Title: Two-Dimensional Semiconductor Alloys: Monolayer Mo1-Xwxse2
Authors: Tongay, Sefaattin
Narang, Deepa S
Kang, Jun
Fan, Wen
Ko, Changhyun
Luce, Alexander V
Wang, Kevin X
Suh, Joonki
Patel, K D
Pathak, V M
Li, Jingbo
Wu, Junqiao
Keywords: Density Functional Theory
Semiconductors
Crystalline Solids
Alloys
Atomic Force Microscopy
Auger Electron Spectroscopy
Photoluminescence
Raman Spectroscopy
Scanning Electron Microscopy
Issue Date: 2014
Publisher: Applied Physics Letters
Amer Inst Physics
Citation: Vol. 104, No. 1
Abstract: Monolayer Mo1-xWxSe2 (x = 0, 0.14, 0.75, and 1) alloys were experimentally realized from synthesized crystals. Mo1-xWxSe2 monolayers are direct bandgap semiconductors displaying high luminescence and are stable in ambient. The bandgap values can be tuned by varying the W composition. Interestingly, the bandgap values do not scale linearly with composition. Such non-linearity is attributed to localization of conduction band minimum states around Mo d orbitals, whereas the valence band maximum states are uniformly distributed among W and Mo d orbitals. Results introduce monolayer Mo1-xWxSe2 alloys with different gap values, and open a venue for broadening the materials library and applications of two-dimensional semiconductors. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4834358
http://gnanaganga.inflibnet.ac.in:8080/jspui/handle/123456789/15063
ISSN: 0003-6951
1077-3118
Appears in Collections:Journal Articles

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