Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493
Title: Charge Transport In Semiconductor Heterogeneous Structure At Oxide Interface By Inserting A Functional Layer
Authors: Kalsh, Aditi
Dhariwal, Sandeep
Lamba, Vijay Kumar
Keywords: Antenna
Bending
Cnt
Fabrics
Flexible Electronics
Nanoelectronics
Wetness
Issue Date: 2024
Publisher: 2024 International Conference on Wireless Communications, Signal Processing and Networking, WiSPNET 2024
Institute of Electrical and Electronics Engineers Inc.
Citation: pp. 1-4
Abstract: This paper presents a simulated work for analysing the charge transport in heterogeneous structure at oxide interface by inserting a functional layer. Complex oxide interfaces are assumed to be highly promising domain in condensed-matter electronics due to the unique physical characteristics and diverse phenomena observed in semiconductor nanoelectronics-based structures. Magnetization at high Curie temperatures, increased temperature superconductivity, ionic conduction, metal-insulator transitions, and polymorphism are examples of these phenomena. Oxide interfaces between highly correlated electron systems also provide a powerful pathway for manipulating charge, spin, orbital, and lattice degrees of freedom and regulating and enhancing effects through interactions with functional layers. This paper suggests a general method for obtaining non-volatile properties at the oxide interface by inserting a functional layer into a heterogeneous structure. The LaAlO3-SrTiO3 (LAO / STO) complex oxide has been chosen for this research paper. © 2024 IEEE.
URI: https://doi.org/10.1109/WiSPNET61464.2024.10533100
https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493
ISBN: 9798350350845
Appears in Collections:Conference Papers

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