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https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493
Title: | Charge Transport In Semiconductor Heterogeneous Structure At Oxide Interface By Inserting A Functional Layer |
Authors: | Kalsh, Aditi Dhariwal, Sandeep Lamba, Vijay Kumar |
Keywords: | Antenna Bending Cnt Fabrics Flexible Electronics Nanoelectronics Wetness |
Issue Date: | 2024 |
Publisher: | 2024 International Conference on Wireless Communications, Signal Processing and Networking, WiSPNET 2024 Institute of Electrical and Electronics Engineers Inc. |
Citation: | pp. 1-4 |
Abstract: | This paper presents a simulated work for analysing the charge transport in heterogeneous structure at oxide interface by inserting a functional layer. Complex oxide interfaces are assumed to be highly promising domain in condensed-matter electronics due to the unique physical characteristics and diverse phenomena observed in semiconductor nanoelectronics-based structures. Magnetization at high Curie temperatures, increased temperature superconductivity, ionic conduction, metal-insulator transitions, and polymorphism are examples of these phenomena. Oxide interfaces between highly correlated electron systems also provide a powerful pathway for manipulating charge, spin, orbital, and lattice degrees of freedom and regulating and enhancing effects through interactions with functional layers. This paper suggests a general method for obtaining non-volatile properties at the oxide interface by inserting a functional layer into a heterogeneous structure. The LaAlO3-SrTiO3 (LAO / STO) complex oxide has been chosen for this research paper. © 2024 IEEE. |
URI: | https://doi.org/10.1109/WiSPNET61464.2024.10533100 https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493 |
ISBN: | 9798350350845 |
Appears in Collections: | Conference Papers |
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