Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16730
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dc.contributor.authorRadhakrishnan, Niranchana-
dc.contributor.authorAlsalami, Zaid-
dc.contributor.authorAl-Qaisy, Shams A-
dc.contributor.authorChamoli, Sushant-
dc.contributor.authorHayder, Huda-
dc.contributor.authorGhobash, Ali-
dc.contributor.authorQusayjawad, Ahmed-
dc.date.accessioned2024-12-12T09:29:52Z-
dc.date.available2024-12-12T09:29:52Z-
dc.date.issued2024-
dc.identifier.citationpp. 1165-1168en_US
dc.identifier.isbn9798350360165-
dc.identifier.urihttps://doi.org/10.1109/ICACITE60783.2024.10616643-
dc.identifier.urihttps://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16730-
dc.description.abstractMemory with multiple ports is widely employed in numerous domains, especially for parallel computations that require rapidity and efficiency. Conventional SRAM-based memory modules encounter constraints on performance and flexibility, including the need to handle a multitude of write inputs and read outputs. Standard cell-based memory, in contrast, provides greater parameterization and flexibility. However, current tools encounter difficulties in constructing these memories as a result of intricate circuitry and a lack of understanding regarding the regular structure of these arrays. This may occasionally lead to an inability to converge under specific circumstances. New techniques for the physical and logical implementation of many-ported standard cell memory (MPSCMs) are introduced in this study. It is suggested that the traditional design process be substituted with two discrete methodologies that offer direction and control to design tools in order to improve the performance, area utilisation, and power efficiency of these memory arrays. An assessment and evaluation process was undertaken on MPSCM macros of different dimensions utilising a commercial 65 nm CMOS technology. These macros were compared to their equivalents that were developed employing conventional and cutting-edge techniques. © 2024 IEEE.en_US
dc.language.isoenen_US
dc.publisher2024 4th International Conference on Advance Computing and Innovative Technologies in Engineering, ICACITE 2024en_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.subjectAnd Standard Cell Memories (Scms)en_US
dc.subjectControlled Placementen_US
dc.subjectLow-Poweren_US
dc.subjectManyported Memoryen_US
dc.subjectRegister Fileen_US
dc.subjectVector Register Fileen_US
dc.titleThe Simplified and Enlarged Memory Management With Efficiency Through Cellsen_US
dc.typeArticleen_US
Appears in Collections:Conference Papers

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