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Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/6414
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dc.contributor.authorJaskiran Kaur-
dc.contributor.authorSurinder Singh-
dc.date.accessioned2024-02-27T05:57:15Z-
dc.date.available2024-02-27T05:57:15Z-
dc.date.issued2014-
dc.identifier.urihttp://gnanaganga.inflibnet.ac.in:8080/jspui/handle/123456789/6414-
dc.description.abstractThis paper presents the electrical properties of the randomly distributed metal/le (Co, Ni and Fe) nano/micro wires on Silicon. Deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the Sil/con substrate. Spin coated films were Irradiated with 150MeV NI (+11) Ions at a fluence of Bel ions/cm2 , followed by UV irradiation and chemical etching in aqueous NaOH (6N, at room temperature]. Later morphological, and electrical properties of the deposited Nano-I microstructures were studied.-
dc.publisherJournal on Digital Signal Processing-
dc.titleTransport Properties of Metallic Nanowires on Silicon Subst Rate-
dc.volVol. 2-
dc.issuedNo. 1-
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