Impedance and Photoaction Spectral Studies of Tungsten Diselenide Thin Films

Abstract

Titanium supported photoelectroactive semiconductor electrodes based on thinfilms of tungsten disele11ide have been prepared by electrochemical codepositiontechnique through galvanostatic route. The deposited films were then subje ctedto thermal treatment at 300° C for two hours in the inert environment. These thinfilms were also characterized by studying their capacitance characteristics andelectrochemical corrosion behaviour on the basis of impedance spectral studies.Tun15sten diselenide thin films were found to be most photoelectroactive andexhibit substantially high resistance towards electrochemical corrosion whendeposition was carried out galvanostatically at 5mA current The capacitancestudies show that the thermally treated tungsten diselenide deposited thin filmsexhibit n-type of semiconductivity. Photoaction spectral studies of these filmswere carried out for the determination of band gap.