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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kalsh, Aditi | - |
dc.contributor.author | Dhariwal, Sandeep | - |
dc.contributor.author | Lamba, Vijay Kumar | - |
dc.date.accessioned | 2024-08-29T05:41:20Z | - |
dc.date.available | 2024-08-29T05:41:20Z | - |
dc.date.issued | 2024 | - |
dc.identifier.citation | pp. 1-4 | en_US |
dc.identifier.isbn | 9798350350845 | - |
dc.identifier.uri | https://doi.org/10.1109/WiSPNET61464.2024.10533100 | - |
dc.identifier.uri | https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493 | - |
dc.description.abstract | This paper presents a simulated work for analysing the charge transport in heterogeneous structure at oxide interface by inserting a functional layer. Complex oxide interfaces are assumed to be highly promising domain in condensed-matter electronics due to the unique physical characteristics and diverse phenomena observed in semiconductor nanoelectronics-based structures. Magnetization at high Curie temperatures, increased temperature superconductivity, ionic conduction, metal-insulator transitions, and polymorphism are examples of these phenomena. Oxide interfaces between highly correlated electron systems also provide a powerful pathway for manipulating charge, spin, orbital, and lattice degrees of freedom and regulating and enhancing effects through interactions with functional layers. This paper suggests a general method for obtaining non-volatile properties at the oxide interface by inserting a functional layer into a heterogeneous structure. The LaAlO3-SrTiO3 (LAO / STO) complex oxide has been chosen for this research paper. © 2024 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.publisher | 2024 International Conference on Wireless Communications, Signal Processing and Networking, WiSPNET 2024 | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
dc.subject | Antenna | en_US |
dc.subject | Bending | en_US |
dc.subject | Cnt | en_US |
dc.subject | Fabrics | en_US |
dc.subject | Flexible Electronics | en_US |
dc.subject | Nanoelectronics | en_US |
dc.subject | Wetness | en_US |
dc.title | Charge Transport In Semiconductor Heterogeneous Structure At Oxide Interface By Inserting A Functional Layer | en_US |
dc.type | Article | en_US |
Appears in Collections: | Conference Papers |
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