Please use this identifier to cite or link to this item: https://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493
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dc.contributor.authorKalsh, Aditi-
dc.contributor.authorDhariwal, Sandeep-
dc.contributor.authorLamba, Vijay Kumar-
dc.date.accessioned2024-08-29T05:41:20Z-
dc.date.available2024-08-29T05:41:20Z-
dc.date.issued2024-
dc.identifier.citationpp. 1-4en_US
dc.identifier.isbn9798350350845-
dc.identifier.urihttps://doi.org/10.1109/WiSPNET61464.2024.10533100-
dc.identifier.urihttps://gnanaganga.inflibnet.ac.in:8443/jspui/handle/123456789/16493-
dc.description.abstractThis paper presents a simulated work for analysing the charge transport in heterogeneous structure at oxide interface by inserting a functional layer. Complex oxide interfaces are assumed to be highly promising domain in condensed-matter electronics due to the unique physical characteristics and diverse phenomena observed in semiconductor nanoelectronics-based structures. Magnetization at high Curie temperatures, increased temperature superconductivity, ionic conduction, metal-insulator transitions, and polymorphism are examples of these phenomena. Oxide interfaces between highly correlated electron systems also provide a powerful pathway for manipulating charge, spin, orbital, and lattice degrees of freedom and regulating and enhancing effects through interactions with functional layers. This paper suggests a general method for obtaining non-volatile properties at the oxide interface by inserting a functional layer into a heterogeneous structure. The LaAlO3-SrTiO3 (LAO / STO) complex oxide has been chosen for this research paper. © 2024 IEEE.en_US
dc.language.isoenen_US
dc.publisher2024 International Conference on Wireless Communications, Signal Processing and Networking, WiSPNET 2024en_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.subjectAntennaen_US
dc.subjectBendingen_US
dc.subjectCnten_US
dc.subjectFabricsen_US
dc.subjectFlexible Electronicsen_US
dc.subjectNanoelectronicsen_US
dc.subjectWetnessen_US
dc.titleCharge Transport In Semiconductor Heterogeneous Structure At Oxide Interface By Inserting A Functional Layeren_US
dc.typeArticleen_US
Appears in Collections:Conference Papers

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