Tunable Junction Magnetoresistance of Fe3−Xpxo4 (P = Mn, Zn)/P-Si Heterojunctions at Room Temperature

Abstract

The tunable junction magnetoresistance of Fe3−xPxO4 (P = Mn, Zn)/p-Si heterostructures (x = 0, 0.5) is reported for potential use in future Si semiconductor-based spintronic applications. In the way that a evidence of conception, Fe3−xPxO4 (P = Mn, Zn)/p-Si heterostructures (x = 0, 0.5) were fabricated by depositing Fe3−xPxO4 (P = Mn, Zn) films on p-Si using pulsed laser deposition technique. All the heterostructures showed spin-valve as well as backward rectifying property at room temperature. Evidently, the heterostructures showed not only an electric field-dependent junction magnetoresistance (JMR) at room temperature in reverse bias but also the magnitude and sign changes of JMR with manganese (0.5) and zinc (0.5) substitutions. The electronic band structure of the heterojunctions is proposed to explain the doping and bias field-dependent JMR sign change behavior of the devices. The room temperature tunable junction magnetoresistance of Fe3−xPxO4 (P = Mn, Zn)/p-Si heterostructures at a low bias voltage and low magnetic field may open up a new favorable circumstance for Si-based and low power consuming spin valves in the near future.