Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications

Abstract

In this work, the Impact of gate length (L g) on the performance of InGaAs/InAs/InGaAs Composite Channel DMDG-HEMT Devices for high-Frequency applications is investigated. The effects of gate length (L g) on the device characteristics are explored by optimizing the barrier thickness(T B). It is evident that by introducing dual material gate (DMG), at both top and bottom of the device, shows an increase in drain current, transconductance and higher I ON /I OFF ratio with less short channel effect (SCE). For drain to source voltage (V ds) = 1 V, InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices exhibit the record drain current (I ds) of 4.42 × 10–3 A/μm, transconductance (g m) of 4.48 S/mm and an current ratio I ON /I OFF = 6.8 × 105 with a reduced subthreshold slope (SS) of 62.1 mV/dec and a threshold voltage (V T) = – 0.12 V for 40 nm gate length. Moreover, the RF and analog performance metrics are explored and record high cutoff frequency f T = 835 GHz and maximum oscillation frequency f max = 986 GHz making it suitable for future terahertz applications.